Tip-Enhanced Raman Spectroscopy (TERS) Study of Defects in Few-Layer MoS2
Daniel Alejandro Castro, Benjamin Dechant, Jie Goodrich
Department of Physics & Astronomy
Faculty Supervisor: Huizhong Xu
Tip-enhanced Raman spectroscopy (TERS) has become a powerful technique for studying chemical information at the nanoscale. In recent years, it has been applied extensively to study a variety of two-dimensional semiconductors as these materials have seen increased use in electronic and optoelectronic devices. Since the device performance can be heavily influenced by defects and other types of inhomogeneities in these materials, it becomes vital to probe these local variations and understand their correlation with device performance.).