2023 116 P

Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer‐Scale Broadband Photonics

By: Hon-Loen Sinn

Department: Physics & Astronomy

Faculty Advisor: Dr. AKM Newaz

Atomically thin two-dimensional transition metal dichalcogenides (TMDs), such as MoS2, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS2 interface limits the application of optoelectronic devices based on conventional metals because of the high contact resistance of the Schottky contacts. On the other hand, a semimetal-TMD-semimetal device can overcome this limitation, where the MIGS are sufficiently suppressed and can result in ohmic contacts. Here we demonstrate the optoelectronic performance of a bismuth-monolayer MoS2-bismuth device with ohmic electrical contacts and extraordinary optoelectronic properties. The combination of large-array device fabrication, high sensitivity, and high-speed response offers great potential for applications in photonics that includes integrated optoelectronic circuits.